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Zheng, Zhenyi ; Zhang, Yue ; Lopez-Dominguez, Victor ; Sánchez-Tejerina, Luis ; Shi, Jiacheng ; Feng, Xueqiang ; Chen, Lei ; Wang, Zilu ; Zhang, Zhizhong ; Zhang, Kun ; et al ( , Nature Communications)
Abstract Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.
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Wang, Qing Hua ; Bedoya-Pinto, Amilcar ; Blei, Mark ; Dismukes, Avalon H. ; Hamo, Assaf ; Jenkins, Sarah ; Koperski, Maciej ; Liu, Yu ; Sun, Qi-Chao ; Telford, Evan J. ; et al ( , ACS Nano)